The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 27, 2011

Filed:

Feb. 12, 2007
Applicants:

Rajiv Yadav Ranjan, San Jose, CA (US);

Petro Estakhri, Pleasanton, CA (US);

Mahmud Assar, Aptos, CA (US);

Parviz Keshtbod, Los Altos Hills, CA (US);

Inventors:

Rajiv Yadav Ranjan, San Jose, CA (US);

Petro Estakhri, Pleasanton, CA (US);

Mahmud Assar, Aptos, CA (US);

Parviz Keshtbod, Los Altos Hills, CA (US);

Assignee:

Avalanche Technology, Inc., Fremont, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/82 (2006.01); G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A non-uniform switching based non-volatile magnetic memory element includes a fixed layer, a barrier layer formed on top of the fixed layer, a first free layer formed on top of the barrier layer, a non-uniform switching layer (NSL) formed on top of the first free layer, and a second free layer formed on top of the non-uniform switching layer. Switching current is applied, in a direction that is substantially perpendicular to the fixed layer, barrier layer, first free layer, non-uniform switching layer and the second free layer causing switching between states of the first free layer, second free layer and non-uniform switching layer with substantially reduced switching current.


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