Lingyi Guo

Title: Lingyi Guo: A Visionary Inventor in Semiconductor Metrology

Introduction

Lingyi Guo, an accomplished inventor based in Shanghai, China, has made significant contributions to the field of semiconductor metrology. With three patents to his name, Guo's work focuses on improving lithography processes and enhancing measurement accuracy in semiconductor manufacturing.

Latest Patents

Among his notable patents is the **Critical Dimension Error Analysis Method**, which presents an innovative approach to analyzing critical dimension (CD) errors during lithography processes. This method involves performing lithography on a wafer, measuring CD values, and employing a reconstruction model to accurately manage outliers for swift error analysis.

Another significant patent by Guo is the **Thick Photo Resist Layer Metrology Target**. This patent features a metrology target designed to enhance the measurement of thick photoresist layers. It includes a first target structure composed of multiple cells containing cell pattern elements, strategically placed within the sample layers, thereby improving measurement efficacy.

Career Highlights

Throughout his career, Lingyi Guo has been associated with key technology companies including Shanghai IC R&D Center Co., Ltd. and KLA Corporation. His work in these organizations has allowed him to spearhead various projects, significantly impacting the semiconductor industry's approach to metrology.

Collaborations

Guo's innovation journey has been enriched through collaborations with notable colleagues, including Xueru Yu and Hongxia Sun. Together, they have contributed to advancements in the field, driving exploration and development of cutting-edge technologies.

Conclusion

Lingyi Guo stands out as a prominent inventor whose contributions to semiconductor metrology are shaping the future of the industry. With his innovative methodologies and collaborative spirit, Guo continues to push boundaries and set new standards in accurate measurements and error analysis.