Hefei, China

Liang Zhao

This inventor holds 5 USPTO granted patents and 2 published patent applications and 2 EPO patents. Top assignee: Changxin Memory Technologies, Inc.. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Liang Zhao. Retrieved from https://idiyas.com/inventor/liang-zhao-p44a2ssv

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 5 

% Patents Active = 100.0

 

Average Co-Inventor Count = 1.5

ph-index = 1


Company Filing History:


Years Active: 2024

Loading Chart...
Loading Chart...
5 patents (USPTO):Explore Patents

Title: Innovations of Inventor Liang Zhao

Introduction

Liang Zhao is a prominent inventor based in Hefei, China. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on innovative methods and structures that enhance semiconductor devices.

Latest Patents

Liang Zhao's latest patents include a semiconductor structure and a method for forming this structure. The method involves providing a substrate that includes a first region and a second region. It also includes forming an insulating layer on the substrate and etching a portion of this layer in the second region. The insulating layer in the first region is configured as a first insulating layer, while the remaining portion in the second region is configured as a second insulating layer. Additionally, a first barrier layer covers the first insulating layer, and a second barrier layer covers the second insulating layer. The process continues with etching the first barrier layer and a portion of the second barrier layer to create a through hole in the first insulating layer and a hole segment in the second barrier layer, followed by the removal of both barrier layers.

Another notable patent is for a semiconductor device that includes a substrate with a memory array region and a peripheral region. This device features a first interlayer insulation layer and a second interlayer insulation layer formed on the substrate. The columnar capacitor array, which consists of columnar capacitors arranged at intervals, is formed in these insulation layers within the memory array region. A contact structure is also established in the first and second interlayer insulation layers in the peripheral region.

Career Highlights

Liang Zhao is currently employed at Changxin Memory Technologies, Inc., where he continues to innovate in semiconductor technology. His work has been instrumental in advancing the capabilities of memory devices.

Collaborations

Some of his notable coworkers include Kai Cao and Xiaoyu Yang, who contribute to the collaborative environment at Changxin Memory Technologies, Inc.

Conclusion

Liang Zhao's contributions to semiconductor technology through his innovative patents and collaborative efforts highlight his importance in the field. His work continues to influence advancements in semiconductor devices and structures.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…