The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 19, 2024

Filed:

Aug. 02, 2021
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventor:

Liang Zhao, Hefei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 49/02 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/31 (2023.02); H01L 28/91 (2013.01); H10B 12/0335 (2023.02);
Abstract

A semiconductor device and a forming method thereof are provided. The semiconductor device includes a substrate, a capacitor array and a supporting structure. A plurality of conductive contact plugs which are arranged at intervals are formed on the substrate. The capacitor array includes a plurality of columnar capacitors which are arranged at intervals. Each columnar capacitor is formed on a respective one of the conductive contact plugs. A lower electrode layer of the columnar capacitor is in contact connection with the conductive contact plug. The supporting structure is formed on the substrate at an edge of the capacitor array and surrounds the capacitor array. A spacing between an inner wall and an outer wall of the supporting structure on any cross section parallel to the substrate is greater than an aperture of a capacitor hole of any one of the columnar capacitors on the cross section.


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