The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2024
Filed:
Apr. 12, 2021
Applicant:
Changxin Memory Technologies, Inc., Hefei, CN;
Inventors:
Kai Cao, Hefei, CN;
Liang Zhao, Hefei, CN;
Assignee:
Changxin Memory Technologies, Inc., Hefei, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H10B 12/485 (2023.02); H01L 22/00 (2013.01); H01L 22/32 (2013.01); H10B 12/0335 (2023.02); H10B 12/315 (2023.02); H10B 12/482 (2023.02);
Abstract
The present disclosure relates to a semiconductor device and a forming method thereof. The forming method includes: providing a substrate; forming node contacts inside the substrate; forming landing pads on an upper surface of the substrate, where the landing pad is in contact with the node contact; forming a barrier layer on exposed surfaces of the landing pads and the node contacts; and after performing an electrical test on the semiconductor device on which the barrier layer is formed, removing the barrier layer on an upper surface of the landing pads.