Hsinchu, Taiwan

Li-Shiun Chen


Average Co-Inventor Count = 5.6

ph-index = 5

Forward Citations = 187(Granted Patents)


Company Filing History:


Years Active: 2004-2015

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5 patents (USPTO):Explore Patents

Title: Inspiring Innovation: The Journey of Li-Shiun Chen

Introduction:

In the bustling city of Hsinchu, Taiwan, resides a visionary inventor whose name has become synonymous with innovation - Li-Shiun Chen. With a deep passion for technological advancement, he has dedicated his career to pushing the boundaries of semiconductor device fabrication.

Latest Patents:

Among his impressive portfolio of patents stands out his groundbreaking "Hybrid Gate Process for Fabricating FinFET Device." This method revolutionizes semiconductor fabrication by enhancing the efficiency and performance of semiconductor devices through a meticulous process of forming fins, gate structures, and metal layers.

Career Highlights:

Li-Shiun Chen has been the driving force behind numerous technological advancements during his tenure at Taiwan Semiconductor Manufacturing Company Ltd. and United Microelectronics Corp. His contributions have not only shaped the semiconductor industry but have also set new standards for technological innovation.

Collaborations:

Collaborating closely with esteemed colleagues such as Tian-Choy Gan and Hsien-Chin Lin, Li-Shiun Chen has fostered a culture of creativity and excellence in the field of semiconductor technology. Together, they have shared their expertise to bring about groundbreaking innovations that have left a lasting impact on the industry.

Conclusion:

Li-Shiun Chen's unwavering dedication to innovation and his relentless pursuit of excellence continue to inspire inventors and entrepreneurs worldwide. His pioneering work in semiconductor device fabrication serves as a beacon of hope for the next generation of innovators, driving them to dream big and push the boundaries of what is possible in the world of technology.

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