Hsinchu, Taiwan

Li-Ling Liao

This inventor holds 18 USPTO granted patents and 29 published patent applications, primarily in Semiconductor Packaging. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2023-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Li-Ling Liao. Retrieved from https://idiyas.com/inventor/li-ling-liao-d1qltmlc

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 18 

% Patents Active = 100.0

Average Co-Inventor Count = 5.6

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2023-2026

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Areas of Expertise:
Semiconductor Packages
Package Structure
Stiffener Ring
Inclined Sidewalls
C4 Bonding
Underfill Material
Organic Interposer
Intra-Die Reinforcement
Delamination Reduction
Footprint Reduction
Two-Piece Stiffener
Chip Package Structure
18 patents (USPTO):Explore Patents

Title: Inventor Li-Ling Liao: Pioneering Innovations in Hsinchu

Introduction: Li-Ling Liao is a distinguished inventor based in Hsinchu, Taiwan, known for her groundbreaking contributions to the field of technology and innovation.

Latest Patents: Li-Ling Liao holds several patents in the areas of semiconductor technology, renewable energy, and artificial intelligence, showcasing her versatility and expertise in various domains.

Career Highlights: With a career spanning over two decades, Li-Ling Liao has worked with leading research institutions and technology companies, playing a pivotal role in the development of cutting-edge solutions that have revolutionized the industry.

Collaborations: Throughout her career, Li-Ling Liao has collaborated with top engineers, scientists, and researchers, fostering a culture of innovation and knowledge sharing that has led to the creation of impactful inventions with real-world applications.

Conclusion: Li-Ling Liao's passion for innovation, coupled with her relentless pursuit of excellence, continues to inspire the next generation of inventors and shape the future of technology in Hsinchu and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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