Singapore, Singapore

Li Li Ding


 

Average Co-Inventor Count = 9.3

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2021-2024

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6 patents (USPTO):

Title: The Innovations of Li Li Ding

Introduction

Li Li Ding is a prominent inventor based in Singapore, known for his contributions to the field of semiconductor technology. With a total of 6 patents to his name, he has made significant advancements in the design and fabrication of electronic devices.

Latest Patents

One of his latest inventions is the oxide semiconductor field effect transistor (OSFET). This innovative device includes a first insulating layer, a source, a drain, a U-shaped channel layer, and a metal gate. The first insulating layer is disposed on a substrate, while the source and drain are integrated within this layer. The U-shaped channel layer is positioned between the source and drain, and the metal gate is placed on top of the U-shaped channel layer, which consists of at least one oxide semiconductor layer. Additionally, Ding has developed a fabrication method for memory devices. This method involves providing a substrate with a bottom electrode layer, forming a buffer layer and a mask layer, and performing an advanced oxidation process to create a resistive layer that surrounds the buffer layer's sidewall.

Career Highlights

Li Li Ding is currently employed at United Microelectronics Corporation, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in enhancing the performance and efficiency of electronic devices.

Collaborations

Throughout his career, Ding has collaborated with notable colleagues, including Yao-Hung Liu and Chien-Ming Lai. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Li Li Ding's contributions to semiconductor technology are noteworthy and reflect his dedication to innovation. His latest patents demonstrate his expertise and commitment to advancing the field.

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