The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2022
Filed:
Jan. 03, 2021
United Microelectronics Corp., Hsin-Chu, TW;
Chien-Ming Lai, Tainan, TW;
Yen-Chen Chen, Tainan, TW;
Jen-Po Huang, Tainan, TW;
Sheng-Yao Huang, Kaohsiung, TW;
Hui-Ling Chen, Kaohsiung, TW;
Qinggang Xing, Singapore, SG;
Ding-Lung Chen, Singapore, SG;
Li Li Ding, Singapore, SG;
Yao-Hung Liu, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.