United Microelectronics Corp.

Li Li Ding

Yao-Hung Liu

Yen-Chen Chen

Chien-Ming Lai

Ding-Lung Chen

Hui-Ling Chen

Sheng-Yao Huang

Jen-Po Huang

Qinggang Xing

Hung-Yueh Chen

Hai Tao Liu

Guoan Du

Yi Yu Lin

Qi Lu Li

Chunlei Wan

Yuchao Chen

Huakai Li

An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

Oxide semiconductor field effect transistor

A method for fabricating memory device includes: providing a substrate having a bottom electrode layer therein, forming a buffer layer and a mask layer on the buffer layer over the substrate, in contact with the bottom electrode layer, performing an advanced oxidation process on a sidewall of the buffer layer to form a resistive layer, which surrounds the whole sidewall of the buffer layer and extends upward vertically from the substrate, and forming, over the substrate, a noble metal layer and a top electrode layer on the noble metal layer, fully covering the resistive layer and the mask layer.

Fabrication method of memory device

Method of forming oxide semiconductor field effect transistor

The present invention relates to a structure of a memory device. The structure of a memory device includes a substrate, including a bottom electrode layer formed therein. A buffer layer is disposed on the substrate, in contact with the bottom electrode layer. A resistive layer surrounds a whole sidewall of the buffer layer, and extends upward vertically from the substrate. A mask layer is disposed on the buffer layer and the resistive layer. A noble metal layer is over the substrate, and fully covers the resistive layer and the mask layer. A top electrode layer is disposed on the noble metal layer.

Structure of memory device and fabrication method thereof

Oxide semiconductor field effect transistor and forming method thereof

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Singapore, Singapore

Li Li Ding