The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2023
Filed:
Dec. 15, 2021
United Microelectronics Corp., Hsinchu, TW;
Hai Tao Liu, Singapore, SG;
Li Li Ding, Singapore, SG;
Yao-Hung Liu, Tainan, TW;
Guoan Du, Singapore, SG;
Qi Lu Li, Singapore, SG;
Chunlei Wan, Singapore, SG;
Yi Yu Lin, Singapore, SG;
Yuchao Chen, Singapore, SG;
Huakai Li, Singapore, SG;
Hung-Yueh Chen, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method for fabricating memory device includes: providing a substrate having a bottom electrode layer therein, forming a buffer layer and a mask layer on the buffer layer over the substrate, in contact with the bottom electrode layer, performing an advanced oxidation process on a sidewall of the buffer layer to form a resistive layer, which surrounds the whole sidewall of the buffer layer and extends upward vertically from the substrate, and forming, over the substrate, a noble metal layer and a top electrode layer on the noble metal layer, fully covering the resistive layer and the mask layer.