Singapore, Singapore

Qi Lu Li


 

Average Co-Inventor Count = 10.0

ph-index = 1


Company Filing History:


Years Active: 2022-2023

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2 patents (USPTO):Explore Patents

Title: Inventor Qi Lu Li: Pioneering Advances in Memory Device Fabrication

Introduction

Qi Lu Li is an innovative inventor based in Singapore, renowned for his contributions in the field of memory device technology. With a total of two patents to his name, he has made significant strides in the fabrication methods that enhance the performance and reliability of memory devices.

Latest Patents

One of Qi Lu Li's notable patents is titled "Fabrication Method of Memory Device," which outlines a method for producing memory devices with enhanced characteristics. This method involves providing a substrate with a bottom electrode layer, then forming a buffer layer and a mask layer on top. An advanced oxidation process is executed to create a resistive layer along the sidewall of the buffer layer, which extends vertically from the substrate. The process culminates in the application of a noble metal layer and a top electrode layer, ensuring thorough coverage of the resistive layer.

His second patent, "Structure of Memory Device and Fabrication Method Thereof," delves into the structural components of the memory device itself. This invention describes a substrate featuring a bottom electrode layer, along with a surrounding resistive layer that is vertically extended. The innovative design incorporates a buffer layer, a mask layer, and a comprehensive arrangement of noble metal and top electrode layers, ideally suited to enhance the functionality of the memory device.

Career Highlights

Qi Lu Li is currently employed at United Microelectronics Corporation, where he draws on his expertise to innovate within the memory technology space. His work has significantly contributed to the company’s advancements in semiconductor technology, specifically focusing on the aspects of memory fabrication.

Collaborations

Throughout his career, Qi Lu Li has collaborated with fellow professionals in the field, including Hai Tao Liu and Li Li Ding. Collaborating with talented individuals contributes to a dynamic exchange of ideas, which fosters further innovation and development in memory devices.

Conclusion

In summary, Qi Lu Li is a pivotal figure in the realm of memory device fabrication. His patents reflect a deep understanding of the intricacies involved in creating advanced memory structures. As he continues to work at United Microelectronics Corporation alongside skilled colleagues, the industry can expect to see further innovations and enhancements in the memory technology landscape.

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