Company Filing History:
Years Active: 2022-2023
Title: Huakai Li - Innovator in Memory Device Technology
Introduction
Huakai Li is a prominent inventor based in Singapore, known for his contributions to the field of memory device technology. With a total of 2 patents to his name, he has made significant strides in the development of advanced fabrication methods for memory devices.
Latest Patents
Huakai Li's latest patents include innovative methods for fabricating memory devices. The first patent describes a fabrication method that involves providing a substrate with a bottom electrode layer, forming a buffer layer and a mask layer, and performing an advanced oxidation process to create a resistive layer. This resistive layer surrounds the sidewall of the buffer layer and extends vertically from the substrate. The method culminates in the formation of a noble metal layer and a top electrode layer that fully covers the resistive layer and the mask layer.
The second patent focuses on the structure of a memory device, which includes a substrate with a bottom electrode layer, a buffer layer in contact with the bottom electrode, and a resistive layer that surrounds the buffer layer. This structure is designed to enhance the performance and reliability of memory devices.
Career Highlights
Huakai Li is currently employed at United Microelectronics Corporation, where he continues to innovate and develop cutting-edge technologies in the semiconductor industry. His work has positioned him as a key player in the advancement of memory device fabrication techniques.
Collaborations
Throughout his career, Huakai Li has collaborated with notable colleagues, including Hai Tao Liu and Li Li Ding. These collaborations have fostered a dynamic environment for innovation and have contributed to the success of various projects.
Conclusion
Huakai Li's contributions to memory device technology through his patents and work at United Microelectronics Corporation highlight his role as a leading inventor in the field. His innovative approaches continue to shape the future of memory devices.