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Li-Chun Li

This inventor holds 35 USPTO granted patents, primarily in Nonvolatile Memory Technology. Top assignees: Mosel Vitelic Corporation, Promos Technologies, Inc, Vitelic Corporation. Active years: 1993-2006.

USPTO Granted Patents = 35

% Patents Active = 100.0

Average Co-Inventor Count = 2.8

ph-index = 8

Forward Citations = 367(Granted Patents)

Location History:

San Jose, CA (US) (1993)
Los Gatos, CA (US) (1995 - 2006)

Company Filing History:

33 out of 442

Mosel Vitelic Corporation

patents

1 out of 358

Promos Technologies, Inc

Years Active: 1993-2006

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Areas of Expertise:

Nonvolatile Memories

Memory Structures

Fabrication Methods

Memory Refresh

Transistors

Integrated Circuits

Data Line Bias

Programmable Circuits

DRAM

Sense Amplifiers

I/O Bias Circuit

35 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7046551 - Nonvolatile memories with asymmetric transistors, nonvolatile memories with high voltage lines extending in the column direction, and nonvolatile memories with decoding circuits sharing a common area (2006-05-16),

2. 6987695 - Writing data to nonvolatile memory (2006-01-17),

3. 6975535 - Electronic memory, such as flash EPROM, with bitwise-adjusted writing current or/and voltage (2005-12-13),

4. 6777280 - Method for fabricating an integrated circuit with a transistor electrode (2004-08-17),

5. 6757199 - Nonvolatile memory structures and fabrication methods (2004-06-29),

6. 6721224 - Memory refresh methods and circuits (2004-04-13),

7. 6674669 - Nonvolatile memory structures and access methods (2004-01-06),

8. 6643186 - Nonvolatile memory structures and fabrication methods (2003-11-04),

9. 6617636 - Nonvolatile memory structures and fabrication methods (2003-09-09),

10. 6584018 - Nonvolatile memory structures and access methods (2003-06-24),

11. 6406953 - Method for fabricating an integrated circuit with a transistor electrode (2002-06-18),

12. 6373778 - Burst operations in memories (2002-04-16),

13. 6355524 - Nonvolatile memory structures and fabrication methods (2002-03-12),

14. 6191997 - Memory burst operations in which address count bits are used as column address bits for one, but not both, of the odd and even columns selected in parallel. (2001-02-20),

15. 6172554 - Power supply insensitive substrate bias voltage detector circuit (2001-01-09),

Title: Innovations in Nonvolatile Memory by Li-Chun Li

Introduction

Li-Chun Li, located in Los Gatos, CA, is an accomplished inventor with a remarkable portfolio of 35 patents. His innovations primarily focus on advancements in nonvolatile memory technologies, showcasing his expertise in semiconductor design and memory architecture.

Latest Patents

Among his latest patents are groundbreaking developments in nonvolatile memories with asymmetric transistors, high voltage lines extending in the column direction, and decoding circuits that share a common area. These patents detail intricate components where nonvolatile memory cells connect to bitlines, utilizing a higher junction breakdown voltage to improve functionality and reduce noise injection. Additionally, the designs emphasize the strategic placement of global decoders and secondary decoders to optimize memory size and performance, highlighting his inventiveness in this technology area.

Career Highlights

Li-Chun has established a notable career, working with reputable companies such as Mosel Vitelic Corporation. His contributions have significantly advanced the field of nonvolatile memory design, cementing his status as a key player in innovation.

Collaborations

Throughout his career, Li-Chun has collaborated with distinguished professionals, including Michael A. Murray and Lawrence C. Liu. These partnerships have not only enriched his work but also fueled advancements in memory technologies through shared knowledge and expertise.

Conclusion

Li-Chun Li's innovative work in nonvolatile memory design exemplifies his dedication to advancing technology. With a considerable number of patents and significant collaborations, he continues to contribute to the evolution of memory solutions that meet the demands of modern electronics. His inventions are poised to inspire future developments in the industry.

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