Boise, ID, United States of America

Lequn Jennifer Liu

USPTO Granted Patents = 10 


Average Co-Inventor Count = 3.7

ph-index = 3

Forward Citations = 24(Granted Patents)


Company Filing History:


Years Active: 2012-2017

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10 patents (USPTO):Explore Patents

Title: Lequn Jennifer Liu: A Pioneer in Phase-Change Memory Technology

Introduction

Lequn Jennifer Liu, an accomplished inventor based in Boise, ID, has made significant contributions to the field of memory technology. With a portfolio of 10 patents, Liu's innovative work focuses on developing advanced memory solutions to enhance performance and reliability in electronic devices.

Latest Patents

One of Liu's most recent patents is the "Phase-change memory cell implant for dummy array leakage reduction." This invention comprises a system that includes a plurality of phase-change memory (PCM) elements. Each element functions as a dummy cell consisting of distinct layers: a bottom electrode layer, a select device layer, a middle electrode layer, a phase-change material layer, and a top electrode layer. Notably, the phase-change material layer is intricately doped with an impurity, aiming to minimize cell leakage in these dummy cells, thereby improving overall memory efficiency.

Career Highlights

Throughout her career, Liu has worked at prestigious companies including Micron Technology Incorporated and Intel Corporation. Her experience in these leading technology firms has equipped her with the expertise necessary to drive innovation in memory solutions and has made her a respected figure in the industry.

Collaborations

Liu has collaborated with notable professionals in her field, including coworkers Yongjun Jeff Hu and Shu Qin. These collaborations have fostered a creative environment that encourages the exchange of ideas and technological advancements, further solidifying Liu's impact in the realm of phase-change memory technology.

Conclusion

Lequn Jennifer Liu's innovative contributions, especially her recent patent on phase-change memory technology, position her as a key player in the advancement of electronic memory solutions. Her work not only enhances device performance but also illustrates the importance of collaboration in driving technological progress. As Liu continues to innovate, her influence on the industry will undoubtedly endure.

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