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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9093367 B1

PDFFull Text
Date of Patent:
Jul. 28, 2015

Filed:

Jun. 27, 2013

Methods of forming doped regions in semiconductor substrates

Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Lequn Jennifer Liu, Boise, ID (US);

Shu Qin, Boise, ID (US);

Allen McTeer, Eagle, ID (US);

Yongjun Jeff Hu, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:

Wells St. John P.S.

Primary Examiner:

Calvin Choi

Int. Cl.
CPC ...
H01L 21/26 (2006.01); H01L 21/42 (2006.01); H01L 21/223 (2006.01); H01L 21/265 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2236 (2013.01); H01L 21/2652 (2013.01); H01L 21/26506 (2013.01); H01L 21/26526 (2013.01); H01L 29/66575 (2013.01);
Abstract

Some embodiments include methods of forming one or more doped regions in a semiconductor substrate. Plasma doping may be used to form a first dopant to a first depth within the substrate. The first dopant may then be impacted with a second dopant to knock the first dopant to a second depth within the substrate. In some embodiments the first dopant is p-type (such as boron) and the second dopant is neutral type (such as germanium). In some embodiments the second dopant is heavier than the first dopant.

Find Patent Forward Citations

Liu, Lequn. (2015). Methods of forming doped regions in semiconductor substrates (U.S. Patent No. 9093367). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9093367

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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