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For the Inventor, By the Inventor

Shanghai, China

Leo Xing

USPTO Granted Patents = 20 

 

Average Co-Inventor Count = 5.7

ph-index = 2

Forward Citations = 12(Granted Patents)


Company Filing History:

goldMedal20 out of 623 
 
Silicon Storage Technology, Inc.
 patents

Years Active: 2019-2024

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20 patents (USPTO):Explore Patents
1. 12144172 - Method of forming a semiconductor device with memory cells, high voltage devices and logic devices on a substrate using a dummy area (2024-11-12),
2. 11968829 - Method of forming memory cells, high voltage devices and logic devices on a semiconductor substrate (2024-04-23),
3. 11799005 - Split-gate flash memory cell with improved control gate capacitive coupling, and method of making same (2023-10-24),
4. 11737266 - Method of forming a semiconductor device with memory cells, high voltage devices and logic devices on a substrate (2023-08-22),
5. 11621335 - Method of making split-gate non-volatile memory cells with erase gates disposed over word line gates (2023-04-04),
6. 11508442 - Non-volatile memory system using strap cells in source line pull down circuits (2022-11-22),
7. 11444091 - Method of making memory cells, high voltage devices and logic devices on a substrate (2022-09-13),
8. 11404545 - Method of forming split-gate flash memory cell with spacer defined floating gate and discretely formed polysilicon gates (2022-08-02),
9. 11322507 - Method of making memory cells, high voltage devices and logic devices on a substrate with silicide on conductive blocks (2022-05-03),
10. 11316024 - Split-gate non-volatile memory cells with erase gates disposed over word line gates, and method of making same (2022-04-26),
11. 11315940 - Method of forming a device with planar split gate non-volatile memory cells, high voltage devices and FinFET logic devices (2022-04-26),
12. 11315635 - Split-gate, 2-bit non-volatile memory cell with erase gate disposed over word line gate, and method of making same (2022-04-26),
13. 11081553 - Method of forming split gate memory cells (2021-08-03),
14. 10879252 - Non-volatile memory cells with floating gates in dedicated trenches (2020-12-29),
15. 10833179 - Method of making split gate non-volatile flash memory cell (2020-11-10),

Title: Inventor Leo Xing - Revolutionizing Technology in Shanghai

Introduction: Leo Xing is a visionary inventor based in Shanghai, China, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Leo Xing holds several patents in the areas of artificial intelligence, robotics, and renewable energy technologies, showcasing his commitment to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Leo Xing has worked with leading tech companies in Shanghai, spearheading research and development projects that have led to significant technological breakthroughs.

Collaborations: Leo Xing has collaborated with top research institutions and universities in China, fostering a culture of innovation and knowledge-sharing within the tech community.

Conclusion: Leo Xing's relentless pursuit of innovation and his passion for creating cutting-edge technologies continue to inspire the next generation of inventors and tech enthusiasts worldwide.

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