Leo Xing

This inventor holds 21 USPTO granted patents and 4 published patent applications and 16 EPO patents. Top assignee: Silicon Storage Technology, Inc.. Active years: 2019-2026.

USPTO Granted Patents = 21 (Patent Applications = 4)

% Patents Active = 95.2

EPO Patents = 16 (Patent Applications = 16)

Average Co-Inventor Count = 5.7

ph-index = 2

Forward Citations = 12(Granted Patents)

Company Filing History:

21 out of 654

Silicon Storage Technology, Inc.

patents

Years Active: 2019-2026

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21 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12621990 - Split gate non-volatile memory cells, HV and logic devices with FINFET structures, and method of making same (2026-05-05),

2. 12144172 - Method of forming a semiconductor device with memory cells, high voltage devices and logic devices on a substrate using a dummy area (2024-11-12),

3. 11968829 - Method of forming memory cells, high voltage devices and logic devices on a semiconductor substrate (2024-04-23),

4. 11799005 - Split-gate flash memory cell with improved control gate capacitive coupling, and method of making same (2023-10-24),

5. 11737266 - Method of forming a semiconductor device with memory cells, high voltage devices and logic devices on a substrate (2023-08-22),

6. 11621335 - Method of making split-gate non-volatile memory cells with erase gates disposed over word line gates (2023-04-04),

7. 11508442 - Non-volatile memory system using strap cells in source line pull down circuits (2022-11-22),

8. 11444091 - Method of making memory cells, high voltage devices and logic devices on a substrate (2022-09-13),

9. 11404545 - Method of forming split-gate flash memory cell with spacer defined floating gate and discretely formed polysilicon gates (2022-08-02),

10. 11322507 - Method of making memory cells, high voltage devices and logic devices on a substrate with silicide on conductive blocks (2022-05-03),

11. 11316024 - Split-gate non-volatile memory cells with erase gates disposed over word line gates, and method of making same (2022-04-26),

12. 11315940 - Method of forming a device with planar split gate non-volatile memory cells, high voltage devices and FinFET logic devices (2022-04-26),

13. 11315635 - Split-gate, 2-bit non-volatile memory cell with erase gate disposed over word line gate, and method of making same (2022-04-26),

14. 11081553 - Method of forming split gate memory cells (2021-08-03),

15. 10879252 - Non-volatile memory cells with floating gates in dedicated trenches (2020-12-29),

Title: Inventor Leo Xing - Revolutionizing Technology in Shanghai

Introduction: Leo Xing is a visionary inventor based in Shanghai, China, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Leo Xing holds several patents in the areas of artificial intelligence, robotics, and renewable energy technologies, showcasing his commitment to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Leo Xing has worked with leading tech companies in Shanghai, spearheading research and development projects that have led to significant technological breakthroughs.

Collaborations: Leo Xing has collaborated with top research institutions and universities in China, fostering a culture of innovation and knowledge-sharing within the tech community.

Conclusion: Leo Xing's relentless pursuit of innovation and his passion for creating cutting-edge technologies continue to inspire the next generation of inventors and tech enthusiasts worldwide.