The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2023
Filed:
Jun. 04, 2021
Silicon Storage Technology, Inc., San Jose, CA (US);
Guo Xiang Song, Shanghai, CN;
Chunming Wang, Shanghai, CN;
Leo Xing, Shanghai, CN;
Xian Liu, Sunnyvale, CA (US);
Nhan Do, Saratoga, CA (US);
Silicon Storage Technology, Inc., San Jose, CA (US);
Abstract
A method of forming a semiconductor device by recessing the upper surface of a semiconductor substrate in first and second areas but not a third area, forming a first conductive layer in the three areas, forming a second conductive layer in all three areas, removing the first and second conductive layers from the second area and portions thereof from the first area resulting in pairs of stack structures each with a control gate over a floating gate, forming a third conductive layer in all three areas, forming a protective layer in the first and second areas and then removing the third conductive layer from the third area, then forming blocks of dummy conductive material in the third area, then etching in the first and second areas to form select and HV gates, and then replacing the blocks of dummy conductive material with blocks of metal material.