Taipei, Taiwan

Lee-Yin Lin

This inventor holds 4 USPTO granted patents. Top assignee: Macronix International Co., Ltd.. Active years: 2016-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Lee-Yin Lin. Retrieved from https://idiyas.com/inventor/lee-yin-lin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.1

ph-index = 2

Forward Citations = 9(Granted Patents)


Location History:

  • Hsinchu, TW (2016)
  • Taipei, TW (2016 - 2020)

Company Filing History:


Years Active: 2016-2020

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4 patents (USPTO):Explore Patents

Title: Lee-Yin Lin: Innovator in Flash Memory Technology

Introduction

Lee-Yin Lin is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of flash memory technology, holding a total of 4 patents. His innovative work has advanced the capabilities of memory devices, making them more efficient and effective.

Latest Patents

One of his latest patents is for an AND type flash memory. This invention includes a memory cell array, a plurality of page buffers, and a plurality of voltage shifting circuits. The memory cell array is coupled to several bit lines and source lines. The page buffers are connected to the bit lines through multiple switches, providing various control signals. These control signals transition between a first voltage and a reference voltage. The voltage shifting circuits receive these control signals, generating driving signals by adjusting the voltage values, which are then provided to the bit lines. The driving signals transition between a second voltage and the reference voltage, with the second voltage being greater than the first.

Another notable patent is related to a program scheme in 3D NAND flash memory. This memory device comprises multiple stacks of word lines, with the word lines having first and second vertical sides. A first plurality of strings and a second plurality of strings are positioned on the respective vertical sides of the word lines in a specific stack. The second plurality of strings is offset from the first in the direction along which the word lines extend. The first program operation involves applying a shielding voltage to a first string in the first plurality and a fourth string in the second plurality, while a program voltage is applied to a second string in the second plurality and a third string in the first plurality.

Career Highlights

Lee-Yin Lin is currently employed at Macronix International Co., Ltd., where he continues to innovate in the field of memory technology. His work has been instrumental in developing advanced memory solutions that meet the growing demands of modern technology.

Collaborations

He has collaborated with several talented individuals, including Teng-Hao Yeh and Chih-Wei Hu, who have contributed to his projects and research endeavors.

Conclusion

Lee-Yin Lin's contributions to flash memory technology have established him as a key figure in the industry. His innovative patents and ongoing work at Macronix International Co., Ltd. continue to shape the future of memory devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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