The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2020

Filed:

Sep. 19, 2019
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Teng-Hao Yeh, Hsinchu County, TW;

Hang-Ting Lue, Hsinchu, TW;

Lee-Yin Lin, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/24 (2006.01); G11C 5/02 (2006.01); H01L 27/11582 (2017.01); H01L 27/11556 (2017.01); G11C 5/06 (2006.01);
U.S. Cl.
CPC ...
G11C 16/24 (2013.01); G11C 5/02 (2013.01); G11C 5/06 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01);
Abstract

An AND type flash memory includes a memory cell array, a plurality of page buffers and a plurality of voltage shifting circuits. The memory cell array is coupled to a plurality of bits lines and source lines. The page buffers are respectively coupled to the bit lines through a plurality of switches, and respectively provides a plurality of control signals. The control signals are transited between a first voltage and a reference voltage. The voltage shifting circuits respectively receive the control signals, generates a plurality of driving signals by shifting voltage values of the control signals, and provides the driving signals to the bit lines. Wherein, the driving signals are transited between a second voltage and the reference voltage, the second voltage is larger than the first voltage.


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