logo

For the Inventor, By the Inventor

Santa Barbara, CA, United States of America

Lee McCarthy

This inventor holds 8 USPTO granted patents and 1 published patent application. Top assignees: Transphorm Inc., University of California, Japan Science and Technology Agency. Active years: 2008-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Lee McCarthy. Retrieved from https://idiyas.com/inventor/lee-mccarthy

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 8 

% Patents Active = 37.5

Average Co-Inventor Count = 3.8

ph-index = 6

Forward Citations = 101(Granted Patents)


Company Filing History:

goldMedal4 out of 107 
 
Transphorm Inc.
 patents
silverMedal4 out of 16,082 
 
University of California
 patents
bronzeMedal2 out of 1,329 
 
Japan Science and Technology Agency
 patents
4. 1 out of 3 
 
Universitaet Bremen
 patents
where one patent can have more than one assignee

Years Active: 2008-2016

Loading Chart...
8 patents (USPTO):Explore Patents
1. 9293561 - High voltage III-nitride semiconductor devices (2016-03-22),
2. 9257547 - III-N device structures having a non-insulating substrate (2016-02-09),
3. 9096939 - Electrolysis transistor (2015-08-04),
4. 8742459 - High voltage III-nitride semiconductor devices (2014-06-03),
5. 8558285 - Method using low temperature wafer bonding to fabricate transistors with heterojunctions of Si(Ge) to III-N materials (2013-10-15),
6. 8334151 - Method for fabricating a direct wafer bonded optoelectronic device (2012-12-18),
7. 7719020 - (Al,Ga,In)N and ZnO direct wafer bonded structure for optoelectronic applications, and its fabrication method (2010-05-18),
8. 7344958 - Method for wafer bonding (A1, In, Ga)N and Zn(S, Se) for optoelectronic applications (2008-03-18),

Certainly! Here is the article about inventor Lee McCarthy:

Title: Unveiling the Innovations of Lee McCarthy from Santa Barbara, CA

Introduction: Lee McCarthy, a prolific inventor based in Santa Barbara, CA, has made significant contributions in the field of high voltage III-nitride semiconductor devices. With a total of 8 patents to his name, McCarthy continues to push the boundaries of semiconductor technology.

Latest Patents:

1. High Voltage III-nitride Semiconductor Devices: McCarthy's latest patent showcases a III-N device with a unique buffer layer, first III-N material layer, second III-N material layer, and dispersion blocking layer. This innovative design induces a 2DEG channel in the first III-N material layer, confining electrons away from the buffer layer.

2. III-N Device Structures with a Non-insulating Substrate: Another patent by McCarthy highlights a III-N device featuring a substrate layer, first III-N material layer, second III-N material layer, and a barrier layer. This configuration ensures optimal electrical conductivity, enhancing device performance.

Career Highlights: McCarthy's professional journey includes significant roles at Transphorm Inc. and the University of California. Through his expertise and dedication, McCarthy has been instrumental in driving innovation in the semiconductor industry.

Collaborations: Throughout his career, McCarthy has collaborated with esteemed individuals such as Umesh Kumar Mishra and Nicholas A. Fichtenbaum. These collaborations have led to the development of cutting-edge technologies and intellectual property.

Conclusion: Lee McCarthy's inventive spirit and commitment to advancing semiconductor technologies have cemented his reputation as a visionary in the field. With a remarkable portfolio of patents and a history of fruitful collaborations, McCarthy continues to shape the future of semiconductor devices.

I hope you find this article informative and engaging! Feel free to reach out if you need more information.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…