Company Filing History:
Years Active: 2008-2016
Certainly! Here is the article about inventor Lee McCarthy:
Title: Unveiling the Innovations of Lee McCarthy from Santa Barbara, CA
Introduction: Lee McCarthy, a prolific inventor based in Santa Barbara, CA, has made significant contributions in the field of high voltage III-nitride semiconductor devices. With a total of 8 patents to his name, McCarthy continues to push the boundaries of semiconductor technology.
Latest Patents:
1. High Voltage III-nitride Semiconductor Devices: McCarthy's latest patent showcases a III-N device with a unique buffer layer, first III-N material layer, second III-N material layer, and dispersion blocking layer. This innovative design induces a 2DEG channel in the first III-N material layer, confining electrons away from the buffer layer.
2. III-N Device Structures with a Non-insulating Substrate: Another patent by McCarthy highlights a III-N device featuring a substrate layer, first III-N material layer, second III-N material layer, and a barrier layer. This configuration ensures optimal electrical conductivity, enhancing device performance.
Career Highlights: McCarthy's professional journey includes significant roles at Transphorm Inc. and the University of California. Through his expertise and dedication, McCarthy has been instrumental in driving innovation in the semiconductor industry.
Collaborations: Throughout his career, McCarthy has collaborated with esteemed individuals such as Umesh Kumar Mishra and Nicholas A. Fichtenbaum. These collaborations have led to the development of cutting-edge technologies and intellectual property.
Conclusion: Lee McCarthy's inventive spirit and commitment to advancing semiconductor technologies have cemented his reputation as a visionary in the field. With a remarkable portfolio of patents and a history of fruitful collaborations, McCarthy continues to shape the future of semiconductor devices.
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