The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2012
Filed:
Apr. 01, 2010
Akihiko Murai, Goleta, CA (US);
Christina YE Chen, Santa Clara, CA (US);
Daniel B. Thompson, Goleta, CA (US);
Lee S. Mccarthy, Santa Barbara, CA (US);
Steven P. Denbaars, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
Umesh K. Mishra, Santa Barbara, CA (US);
Akihiko Murai, Goleta, CA (US);
Christina Ye Chen, Santa Clara, CA (US);
Daniel B. Thompson, Goleta, CA (US);
Lee S. McCarthy, Santa Barbara, CA (US);
Steven P. DenBaars, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
Umesh K. Mishra, Santa Barbara, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED), wherein light passes through electrically conductive ZnO. Flat and clean surfaces are prepared for both the (Al, Ga, In)N and ZnO wafers. A wafer bonding process is then performed between the (Al, Ga, In)N and ZnO wafers, wherein the (Al, Ga, In)N and ZnO wafers are joined together and then wafer bonded in a nitrogen ambient under uniaxial pressure at a set temperature for a set duration. After the wafer bonding process, ZnO is shaped for increasing light extraction from inside of LED.