The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2008
Filed:
Jul. 06, 2005
Akihiko Murai, Goleta, CA (US);
Lee Mccarthy, Santa Barbara, CA (US);
Umesh K. Mishra, Santa Barbara, CA (US);
Steven P. Denbaars, Goleta, CA (US);
Carsten Kruse, Bremen, DE;
Stephan Figge, Bremen, DE;
Detlef Hommel, Bremen, DE;
Akihiko Murai, Goleta, CA (US);
Lee McCarthy, Santa Barbara, CA (US);
Umesh K. Mishra, Santa Barbara, CA (US);
Steven P. DenBaars, Goleta, CA (US);
Carsten Kruse, Bremen, DE;
Stephan Figge, Bremen, DE;
Detlef Hommel, Bremen, DE;
The Regents of the University of California, Oakland, CA (US);
Universitaet Bremen, , DE;
Abstract
A method for producing a wafer bonded structure between (Al, In, Ga)N and Zn(S,Se). A highly reflective and conductive distributed Bragg reflector (DBR) for relatively short optical wave lengths can be fabricated using Zn(S,Se) and MgS/(Zn, Cd)Se materials. Using wafer bonding techniques, these high-quality DBR structures can be combined with a GaN-based optical device structure.