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For the Inventor, By the Inventor

New York, NY, United States of America

Lars-Ake Ragnarsson

USPTO Granted Patents = 8

Average Co-Inventor Count = 5.0

ph-index = 5

Forward Citations = 77(Granted Patents)


Location History:

  • Katonah, NY (US) (2004 - 2009)
  • New York, NY (US) (2005 - 2011)

Company Filing History:

goldMedal8 out of 164,108 
 
International Business Machines Corporation
 patents

Years Active: 2004-2011

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8 patents (USPTO):
1. 7923743 - Semiconductor structure including mixed rare earth oxide formed on silicon (2011-04-12),
2. 7648864 - Semiconductor structure including mixed rare earth oxide formed on silicon (2010-01-19),
3. 7488640 - Aluminum nitride and aluminum oxide/aluminum nitride heterostructure gate dielectric stack based field effect transistors and method for forming same (2009-02-10),
4. 7432550 - Semiconductor structure including mixed rare earth oxide formed on silicon (2008-10-07),
5. 7169674 - Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier (2007-01-30),
6. 6891231 - Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier (2005-05-10),
7. 6852575 - Method of forming lattice-matched structure on silicon and structure formed thereby (2005-02-08),
8. 6831339 - Aluminum nitride and aluminum oxide/aluminum nitride heterostructure gate dielectric stack based field effect transistors and method for forming same (2004-12-14),

Title: Innovations of Lars-Ake Ragnarsson in Semiconductor Technology

Introduction

Lars-Ake Ragnarsson is a prominent inventor based in New York, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 8 patents. His work focuses on the development of advanced semiconductor structures that enhance performance and efficiency.

Latest Patents

One of his latest patents involves a semiconductor structure that includes a mixed rare earth oxide formed on silicon. This innovative method results in a semiconductor structure where the mixed rare earth oxide is lattice-matched to silicon. This advancement is crucial for improving the functionality of semiconductor devices.

Career Highlights

Lars-Ake Ragnarsson is currently employed at International Business Machines Corporation, commonly known as IBM. His role at IBM allows him to collaborate with leading experts in the field and contribute to groundbreaking research and development in semiconductor technology.

Collaborations

Throughout his career, Lars-Ake has worked alongside notable colleagues such as Supratik Guha and Nestor Alexander Bojarczuk, Jr. These collaborations have fostered an environment of innovation and have led to the successful development of various semiconductor technologies.

Conclusion

Lars-Ake Ragnarsson's contributions to semiconductor technology through his patents and collaborations highlight his importance in the field. His work continues to influence advancements in the industry, making him a key figure in the realm of innovation.

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