The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7488640 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 10, 2009

Filed:

Oct. 29, 2004
Applicants:

Nestor A. Bojarczuk, Jr., Poughkeepsie, NY (US);

Eduard Cartier, New York, NY (US);

Supratik Guha, Chappaqua, NY (US);

Lars-ake Ragnarsson, Katonah, NY (US);

Inventors:

Nestor A. Bojarczuk, Jr., Poughkeepsie, NY (US);

Eduard Cartier, New York, NY (US);

Supratik Guha, Chappaqua, NY (US);

Lars-Ake Ragnarsson, Katonah, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract

A structure (e.g., field effect transistor) and a method for making the structure, include a substrate having a source region, a drain region, and a channel region therebetween, an insulating layer disposed over the channel region, the insulating layer including a layer including aluminum nitride disposed over the channel region, and a gate electrode disposed over the insulating layer.


Find Patent Forward Citations

Bojarczuk, Jr., Nestor. (2009). Aluminum nitride and aluminum oxide/aluminum nitride heterostructure gate dielectric stack based field effect transistors and method for forming same (U.S. Patent No. 7488640). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7488640

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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