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For the Inventor, By the Inventor

Poughkeepsie, NY, United States of America

Nestor A Bojarczuk, Jr

USPTO Granted Patents = 22 


Average Co-Inventor Count = 4.5

ph-index = 12

Forward Citations = 513(Granted Patents)


Company Filing History:

goldMedal22 out of 164,108 
 
International Business Machines Corporation
 patents

Years Active: 1997-2012

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22 patents (USPTO):
1. 8193051 - Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectrics (2012-06-05),
2. 7928514 - Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectrics (2011-04-19),
3. 7745278 - Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high K dielectrics (2010-06-29),
4. 7488640 - Aluminum nitride and aluminum oxide/aluminum nitride heterostructure gate dielectric stack based field effect transistors and method for forming same (2009-02-10),
5. 7479683 - Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectrics (2009-01-20),
6. 7452767 - Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high k dielectrics (2008-11-18),
7. 7446380 - Stabilization of flatband voltages and threshold voltages in hafnium oxide based silicon transistors for CMOS (2008-11-04),
8. 7242055 - Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxide (2007-07-10),
9. 7105889 - Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high k dielectrics (2006-09-12),
10. 7078301 - Rare earth metal oxide memory element based on charge storage and method for manufacturing same (2006-07-18),
11. 6894338 - Rare earth metal oxide memory element based on charge storage and method for manufacturing same (2005-05-17),
12. 6861728 - Dielectric stack without interfacial layer (2005-03-01),
13. 6831339 - Aluminum nitride and aluminum oxide/aluminum nitride heterostructure gate dielectric stack based field effect transistors and method for forming same (2004-12-14),
14. 6541079 - Engineered high dielectric constant oxide and oxynitride heterostructure gate dielectrics by an atomic beam deposition technique (2003-04-01),
15. 6528374 - Method for forming dielectric stack without interfacial layer (2003-03-04),

Title: Innovator Nestor A. Bojarczuk, Jr.: Pioneering Semiconductor Technology

Introduction

Nestor A. Bojarczuk, Jr. is a prominent inventor based in Poughkeepsie, NY, who has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 22 patents, his work has paved the way for advancements in CMOS device fabrication and high-k dielectrics.

Latest Patents

Among his recent innovations, Bojarczuk has developed a patent on the selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectrics. This invention presents a sophisticated semiconductor structure that includes a semiconductor substrate with multiple source and drain diffusion regions, creating distinct device channels. The architecture features a first gate stack for pFET devices, which incorporates a high-k gate dielectric, an insulating interlayer, and a fully silicided metal gate electrode. This configuration stabilizes the threshold and flatband voltage of the p-FET device, utilizing materials such as aluminum oxynitride, boron nitride, and gallium nitride. Additionally, a second gate stack for nFET devices is integrated into the design, highlighting the advanced capabilities of his semiconductor structure.

Career Highlights

Bojarczuk has established a remarkable career at International Business Machines Corporation (IBM), where he has focused on innovation in semiconductor technologies. His extensive research and development efforts have not only earned him multiple patents but have also made him a key player in the company’s advancements in this domain.

Collaborations

Throughout his career, Nestor has collaborated with notable colleagues, including Supratik Guha and Eduard Albert Cartier. These partnerships have contributed to the progression of research and patented innovations in semiconductor technology, enhancing the capabilities and applications of modern electronics.

Conclusion

Nestor A. Bojarczuk, Jr. exemplifies the spirit of innovation in the semiconductor industry. His contributions, marked by numerous patents and collaborations, continue to influence the development of cutting-edge technologies at IBM and beyond. As an inventor, he has significantly impacted the landscape of semiconductor fabrication, paving the way for future advancements.

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