Growing community of inventors

New York, NY, United States of America

Lars-Ake Ragnarsson

Average Co-Inventor Count = 5.05

ph-index = 5

The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.

Forward Citations = 77

Lars-Ake RagnarssonSupratik Guha (8 patents)Lars-Ake RagnarssonNestor Alexander Bojarczuk, Jr (6 patents)Lars-Ake RagnarssonVijay Narayanan (4 patents)Lars-Ake RagnarssonDouglas Andrew Buchanan (4 patents)Lars-Ake RagnarssonKevin K Chan (2 patents)Lars-Ake RagnarssonEduard Albert Cartier (2 patents)Lars-Ake RagnarssonEvgeni Petrovich Gousev (2 patents)Lars-Ake RagnarssonPaul Charles Jamison (2 patents)Lars-Ake RagnarssonChristopher Peter D'Emic (2 patents)Lars-Ake RagnarssonNestor A Bojarczuk, Jr (2 patents)Lars-Ake RagnarssonLars-Ake Ragnarsson (8 patents)Supratik GuhaSupratik Guha (119 patents)Nestor Alexander Bojarczuk, JrNestor Alexander Bojarczuk, Jr (20 patents)Vijay NarayananVijay Narayanan (246 patents)Douglas Andrew BuchananDouglas Andrew Buchanan (21 patents)Kevin K ChanKevin K Chan (230 patents)Eduard Albert CartierEduard Albert Cartier (101 patents)Evgeni Petrovich GousevEvgeni Petrovich Gousev (90 patents)Paul Charles JamisonPaul Charles Jamison (67 patents)Christopher Peter D'EmicChristopher Peter D'Emic (34 patents)Nestor A Bojarczuk, JrNestor A Bojarczuk, Jr (22 patents)
..
Inventor’s number of patents
..
Strength of working relationships

Company Filing History:

1. International Business Machines Corporation (8 from 164,108 patents)


8 patents:

1. 7923743 - Semiconductor structure including mixed rare earth oxide formed on silicon

2. 7648864 - Semiconductor structure including mixed rare earth oxide formed on silicon

3. 7488640 - Aluminum nitride and aluminum oxide/aluminum nitride heterostructure gate dielectric stack based field effect transistors and method for forming same

4. 7432550 - Semiconductor structure including mixed rare earth oxide formed on silicon

5. 7169674 - Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier

6. 6891231 - Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier

7. 6852575 - Method of forming lattice-matched structure on silicon and structure formed thereby

8. 6831339 - Aluminum nitride and aluminum oxide/aluminum nitride heterostructure gate dielectric stack based field effect transistors and method for forming same

Please report any incorrect information to support@idiyas.com
idiyas.com
as of
12/4/2025
Loading…