The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2005
Filed:
Jul. 05, 2001
Applicants:
Nestor Alexander Bojarczuk, Jr., Poughkeepsie, NY (US);
Douglas Andrew Buchanan, Cortlandt Manor, NY (US);
Supratik Guha, Chappaqua, NY (US);
Vijay Narayanan, New York, NY (US);
Lars-ake Ragnarsson, New York, NY (US);
Inventors:
Nestor Alexander Bojarczuk, Jr., Poughkeepsie, NY (US);
Douglas Andrew Buchanan, Cortlandt Manor, NY (US);
Supratik Guha, Chappaqua, NY (US);
Vijay Narayanan, New York, NY (US);
Lars-Ake Ragnarsson, New York, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/00 ; H01L021/84 ;
U.S. Cl.
CPC ...
Abstract
A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.