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Plano, TX, United States of America

Lancy Y Tsung

This inventor holds 6 USPTO granted patents. Top assignee: Texas Instruments Corporation. Active years: 2001-2007.

USPTO Granted Patents = 6

% Patents Active = 100.0

Average Co-Inventor Count = 2.8

ph-index = 3

Forward Citations = 30(Granted Patents)

Company Filing History:

6 out of 29,854

Texas Instruments Corporation

Years Active: 2001-2007

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6 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7262409 - Chemical etch solution and technique for imaging a device's shallow junction profile (2007-08-28),

2. 6884362 - Mass production of cross-section TEM samples by focused ion beam deposition and anisotropic etching (2005-04-26),

3. 6803273 - Method to salicide source-line in flash memory with STI (2004-10-12),

4. 6786978 - Mass production of cross-section TEM samples by focused ion beam deposition and anisotropic etching (2004-09-07),

5. 6380031 - Method to form an embedded flash memory circuit with reduced process steps (2002-04-30),

6. 6306737 - Method to reduce source-line resistance in flash memory with sti (2001-10-23),

Profile summary based on public USPTO records.

Please report any incorrect information to [email protected]

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