The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2002
Filed:
Aug. 10, 2000
Applicant:
Inventors:
Freidoon Mehrad, Plano, TX (US);
Jie Xia, Plano, TX (US);
Sandra Zheng, Plano, TX (US);
Lancy Tsung, Plano, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
A method to form an embedded FLASH integrated circuit with reduced processing steps is described. In the method a partial etch is performed on the control gate region of a polycrystalline silicon film ( ). A multiple etch process is then used to simultaneously form the FLASH memory cell gate stack ( ), the NMOS gate structure ( ) and the PMOS gate structure ( ).