The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2001
Filed:
Jan. 27, 2000
Freidoon Mehrad, Plano, TX (US);
Thomas M. Ambrose, Richardson, TX (US);
Lancy Y. Tsung, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method of forming a semiconductor component having a conductive line (,) that crosses a trench (,). The method involves forming steps (,) in the sidewalls of the trench (,) in a semiconductor substrate (,). A dopant may be implanted at a first energy level into the semiconductor substrate (,) to form a first conductive region (,). The dopant may be implanted at a second energy level into the semiconductor substrate (,) to form a second conductive region (,). The first energy level may be greater than the second energy level. The first conductive region (,) and the second conductive region (,) may form the conductive line (,).