Company Filing History:
Years Active: 2019-2022
Title: Innovations of Lain-Jong Li in Semiconductor Technology
Introduction
Lain-Jong Li is a prominent inventor based in Thuwal, Saudi Arabia. He has made significant contributions to the field of semiconductor technology, holding a total of eight patents. His work focuses on methods and devices that enhance the growth and formation of transition metal dichalcogenides and semiconductor devices.
Latest Patents
Lain-Jong Li's latest patents include a method for growing a transition metal dichalcogenide layer and a semiconductor device having a lateral semiconductor heterojunction. The method for growing a transition metal dichalcogenide layer involves arranging a substrate with a first transition metal contained pad in a chemical vapor deposition chamber. A chalcogen contained precursor is positioned upstream of the substrate, and the chamber is heated to form a transition metal dichalcogenides layer. The semiconductor device patent describes a method for forming a lateral semiconductor heterojunction, which includes the formation of metal chalcogenide layers adjacent to metal electrodes on a substrate.
Career Highlights
Lain-Jong Li is affiliated with the King Abdullah University of Science and Technology, where he conducts research and development in semiconductor technologies. His innovative approaches have led to advancements in the efficiency and functionality of semiconductor devices.
Collaborations
Some of Lain-Jong Li's notable coworkers include Ming-Hui Chiu and Hao-Ling Tang. Their collaborative efforts contribute to the ongoing research and development in the field of semiconductor technology.
Conclusion
Lain-Jong Li's contributions to semiconductor technology through his patents and research at King Abdullah University of Science and Technology highlight his role as an influential inventor in the field. His work continues to pave the way for advancements in semiconductor applications.
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