King Abdullah University of Science and Technology

Lain-Jong Li

Jun Ming

Hao-Ling Tang

Jing-Kai Huang

Ming-Hui Chiu

Ming-Yang Li

Boon Siew Ooi

Tien Khee Ng

Munir M Eldesouki

Chao Zhao

Feng-Yu Wu

Pushpendra Kumar

Xiulin Yang

Ahmed Y Alyameni

Ang-Yu Lu

A method for growing a transition metal dichalcogenide layer involves arranging a substrate having a first transition metal contained pad is arranged in a chemical vapor deposition chamber. A chalcogen contained precursor is arranged upstream of the substrate in the chemical vapor deposition chamber. The chemical vapor deposition chamber is heated for a period of time during which a transition metal dichalcogenides layer, containing transition metal from the first transition metal contained pad and chalcogen from the chalcogen contained precursor, is formed in an area adjacent to the first transition metal contained pad.

Method for growing a transition metal dichalcogenide layer, transition metal dichalcogenide growth device, and method for forming a semiconductor device

A method for forming a semiconductor device having a lateral semiconductor heterojunction involves forming a first metal chalcogenide layer of the lateral semiconductor heterojunction adjacent to a first metal electrode on a substrate. The first metal chalcogenide layer includes a same metal as the first metal electrode and at least some of the first metal chalcogenide layer includes metal from the first metal electrode. A second metal chalcogenide layer of the lateral semiconductor heterojunction is formed adjacent to the first metal chalcogenide layer. A second metal electrode is formed adjacent to the second metal chalcogenide layer. The second metal chalcogenide layer includes a same metal as the second metal electrode.

Semiconductor device having a lateral semiconductor heterojunction and method

The present disclosure provides for a lithium-sulfur battery with a dual blocking layer between the anode and cathode, providing for high storage capacity and improved performance.

Lithium-sulfur battery, a dual blocking layer, methods of making, and methods of use thereof

Methods of direct growth of high quality group III-V and group III-N based materials and semiconductor device structures in the form of nanowires, planar thin film, and nanowires-based devices on metal substrates are presented. The present compound semiconductor all-metal scheme greatly simplifies the fabrication process of high power light emitters overcoming limited thermal and electrical conductivity of nanowires grown on silicon substrates and metal thin film in prior art. In an embodiment the methods include: (i) providing a metal substrate; (ii) forming a transition metal dichalcogenide (TMDC) layer on a surface of the metal substrate; and (iii) growing a semiconductor epilayer on the transition metal dichalcogenide layer using a semiconductor epitaxy growth system. In an embodiment, the semiconductor device structures can be compound semiconductors in contact with a layer of metal dichalcogenide, wherein the layer of metal dichalcogenide is in contact with a metal substrate.

Light emitters on transition metal dichalcogenides directly converted from thermally and electrically conductive substrates and method of making the same

Prelithiation of a battery anode carried out using controlled lithium metal vapor deposition. Lithium metal can be avoided in the final battery. This prelithiated electrode is used as potential anode for Li-ion or high energy Li&#x2014;S battery. The prelithiation of lithium metal onto or into the anode reduces hazardous risk, is cost effective, and improves the overall capacity. The battery containing such an anode exhibits remarkably high specific capacity and a long cycle life with excellent reversibility.

Lithium batteries, anodes, and methods of anode fabrication

A device comprising: at least one first layer, such as a graphene layer, at least one second layer of transition metal dichalcogenide, wherein the at least one first layer and the at least one second layer of transition metal dichalcogenide form at least one heterojunction. The first and second layers are laterally displaced but may overlap over a length of 0 nm to 500 nm. A low-resistance contact is formed. The device can be a transistor including a field effect transistor. The layers can be formed by chemical vapor deposition. The graphene can be heavily p-doped. Transistor performance data are described.

Lateral heterojunctions between a first layer and a second layer of transition metal dichalcogenide

The present disclosure provides for methods of phosphidation, catalysts formed from phosphidation, and methods of producing H.

Growing community of inventors

Thuwal, Saudi Arabia

Lain-Jong Li