The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2020
Filed:
Nov. 15, 2017
Applicant:
King Abdullah University of Science and Technology, Thuwal, SA;
Inventors:
Assignee:
KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY, Thuwal, SA;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/267 (2006.01); H01L 29/16 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01); H01L 29/76 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/267 (2013.01); H01L 29/1606 (2013.01); H01L 29/24 (2013.01); H01L 29/66045 (2013.01); H01L 29/7606 (2013.01); H01L 29/78618 (2013.01); H01L 29/78684 (2013.01); H01L 29/78696 (2013.01);
Abstract
A device comprising: at least one first layer, such as a graphene layer, at least one second layer of transition metal dichalcogenide, wherein the at least one first layer and the at least one second layer of transition metal dichalcogenide form at least one heterojunction. The first and second layers are laterally displaced but may overlap over a length of 0 nm to 500 nm. A low-resistance contact is formed. The device can be a transistor including a field effect transistor. The layers can be formed by chemical vapor deposition. The graphene can be heavily p-doped. Transistor performance data are described.