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For the Inventor, By the Inventor

Suwon, South Korea

Kwan-heum Lee

This inventor holds 19 USPTO granted patents and 1 published patent application, primarily in Semiconductor Devices. Top assignees: Samsung Electronics Co., Ltd., Samsung Electronics Ltd.. Active years: 2013-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kwan-heum Lee. Retrieved from https://idiyas.com/inventor/kwan-heum-lee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 19 

% Patents Active = 84.2

Average Co-Inventor Count = 6.1

ph-index = 5

Forward Citations = 44(Granted Patents)


Company Filing History:

goldMedal18 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents
silverMedal1 out of 6,542 
 
Samsung Electronics Ltd.
 patents

Years Active: 2013-2026

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Areas of Expertise:
Semiconductor Layer Configurations
Fin Structure
Strain-Inducing Layers
Bridge Layer
Composite Spacers
Manufacturing Methods
Source/Drain Regions
Stressor
Dielectric Materials
Layer Configurations
Stress Creating Layer
19 patents (USPTO):Explore Patents
1. 12581634 - Semiconductor devices incorporating semiconductor layer configurations and methods of manufacturing the same (2026-03-17),
2. 11469237 - Semiconductor devices with layers commonly contacting fins and methods of manufacturing the same (2022-10-11),
3. 10790361 - Semiconductor device having a fin structure and a manufacturing method thereof (2020-09-29),
4. 10629604 - Method of manufacturing semiconductor device having stressor (2020-04-21),
5. 10304932 - Semiconductor device having a fin structure and a manufacturing method thereof (2019-05-28),
6. 10304840 - Semiconductor device having stressor and method of manufacturing the same (2019-05-28),
7. 10297601 - Semiconductor devices with layers commonly contacting fins and methods of manufacturing the same (2019-05-21),
8. 10147723 - Semiconductor devices having bridge layer and methods of manufacturing the same (2018-12-04),
9. 9755076 - Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devices (2017-09-05),
10. 9735158 - Semiconductor devices having bridge layer and methods of manufacturing the same (2017-08-15),
11. 9553192 - Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devices (2017-01-24),
12. 9397219 - Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devices (2016-07-19),
13. 9368495 - Semiconductor devices having bridge layer and methods of manufacturing the same (2016-06-14),
14. 9275995 - Semiconductor devices having composite spacers containing different dielectric materials (2016-03-01),
15. 9112054 - Methods of manufacturing semiconductor devices (2015-08-18),

Title: Innovations of Kwan-heum Lee: A Leading Inventor in Semiconductor Technology

Introduction

Kwan-heum Lee is a prominent inventor located in Suwon-si, Korea, recognized for his contributions to semiconductor technology. He holds a total of 19 patents, showcasing his expertise and innovation in this critical field, particularly in creating advanced semiconductor devices.

Latest Patents

Kwan-heum Lee's recent patents include groundbreaking inventions such as semiconductor devices with layers commonly contacting fins and methods of manufacturing the same. This invention describes a semiconductor device featuring a first active fin and multiple second active fins, alongside first and second source/drain layer structures. Another significant patent involves a semiconductor device having a fin structure, which includes regions for both negative channel field-effect transistors (nFET) and positive channel field-effect transistors (pFET). This innovation incorporates specific materials and structural angles to enhance device performance.

Career Highlights

Kwan-heum Lee is currently employed at Samsung Electronics Co., Ltd., where he continues to develop and innovate cutting-edge semiconductor technologies. His work is vital to the advancement of electronics, paving the way for more efficient and advanced electronic devices.

Collaborations

Throughout his career, Kwan-heum has collaborated with talented colleagues, including Jin-bum Kim and Cho-eun Lee. These partnerships highlight the importance of teamwork in driving forward innovative solutions in the field of semiconductor technology.

Conclusion

Kwan-heum Lee's contributions to semiconductor technology through his numerous patents and collaborations exemplify his dedication to innovation. With his expertise, he remains a vital asset to Samsung Electronics Co., Ltd. and the wider electronics industry, as he continues to push the boundaries of what's possible in semiconductor design and manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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