The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 2016

Filed:

Dec. 19, 2014
Applicants:

Seok-hoon Kim, Suwon-si, KR;

Jin-bum Kim, Seoul, KR;

Kwan-heum Lee, Suwon-si, KR;

Byeong-chan Lee, Yongin-si, KR;

Cho-eun Lee, Pocheon-si, KR;

Jin-hee Han, Ansan-si, KR;

Bon-young Koo, Suwon-si, KR;

Inventors:

Seok-Hoon Kim, Suwon-si, KR;

Jin-Bum Kim, Seoul, KR;

Kwan-Heum Lee, Suwon-si, KR;

Byeong-Chan Lee, Yongin-si, KR;

Cho-Eun Lee, Pocheon-si, KR;

Jin-Hee Han, Ansan-si, KR;

Bon-Young Koo, Suwon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/088 (2006.01); H01L 27/02 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 27/0207 (2013.01); H01L 29/7842 (2013.01);
Abstract

A semiconductor device includes a substrate, a first active fin and a second active fin on the substrate, respectively, a plurality of first epitaxial layers on the first active fin and on the second active fin, respectively, a plurality of second epitaxial layers on the plurality of first epitaxial layers, a bridge layer connecting the plurality of second epitaxial layers to each other, and a third epitaxial layer on the bridge layer.


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