Hsinchu, Taiwan

Kuo-Liang Huang

This inventor holds 4 USPTO granted patents. Top assignees: United Microelectronics Corp., United Semiconductor (Xiamen) Co., Ltd.. Active years: 1999-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kuo-Liang Huang. Retrieved from https://idiyas.com/inventor/kuo-liang-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.1

ph-index = 1

Forward Citations = 14(Granted Patents)


Company Filing History:


Years Active: 1999-2022

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4 patents (USPTO):Explore Patents

Title: Kuo-Liang Huang: Innovator in Semiconductor Technology

Introduction

Kuo-Liang Huang is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on innovative memory devices and integrated circuit fabrication methods.

Latest Patents

One of his latest patents is for a resistive memory device and manufacturing method. This device includes a first electrode, a second electrode, a first metal oxide layer, a second metal oxide layer, and a multilayer insulator structure. The first metal oxide layer is positioned between the first and second electrodes, while the second metal oxide layer is situated between the first metal oxide layer and the second electrode. The multilayer insulator structure is located between the two metal oxide layers. The first metal oxide layer contains first metal atoms, the second metal oxide layer contains second metal atoms, and the multilayer insulator structure includes third metal atoms. Notably, the atomic percent of the third metal atoms in the multilayer insulator structure gradually changes in the vertical direction.

Another significant patent involves a method of fabricating a resistor and a capacitor electrode in an integrated circuit. This semiconductor fabrication method enhances the quality of the resultant integrated circuit. The process begins with the formation of a polysilicon layer, followed by the optional creation of a first oxide layer over it. A first ion-implantation process converts the polysilicon layer into a lightly-doped version. A second ion-implantation process is then performed on the predefined electrode part, converting it into a heavily-doped polysilicon layer. A selective removal process follows, leading to the formation of the intended resistor and capacitor electrode.

Career Highlights

Kuo-Liang Huang has worked with notable companies in the semiconductor industry, including United Microelectronics Corporation and United Semiconductor (Xiamen) Co., Ltd. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Throughout his career, Kuo-Liang Huang has collaborated with esteemed colleagues such as Wen-Kuang Tai and Kuo-Tung Chu. These collaborations have further enriched his work and contributions to the field.

Conclusion

Kuo-Liang Huang is a distinguished inventor whose work in semiconductor technology has led to multiple patents and advancements in the industry. His innovative approaches

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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