The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 1999
Filed:
Jun. 24, 1998
Cheng-Yu Fang, Hsinchu, TW;
Kuo-Liang Huang, Hsinchu, TW;
Ching-Gji Hsu, Miao-Li, TW;
Yung-Chieh Fan, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of forming an inter-metal dielectric layer using hydrogen silsesquoxane (HSQ) as one of the dielectric layers. HSQ is a highly fluidic material that has a high gap-filling capacity. Therefore, the desired thickness and uniformity can be obtained in a single coating operation. Furthermore, when the HSQ layer is cured in an atmosphere of gaseous nitrogen, the HSQ layer is able to attain a high degree of planarity. Consequently, there is no need to planarize the dielectric layer before carrying out subsequent operations.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile