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For the Inventor, By the Inventor

Taipei, Taiwan

Kuo-Liang Chao

This inventor holds 13 USPTO granted patents. Top assignees: Pfc Device Corporation, Pfc Device Holdings Limited. Active years: 2013-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kuo-Liang Chao. Retrieved from https://idiyas.com/inventor/kuo-liang-chao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 13

% Patents Active = 100.0

Average Co-Inventor Count = 3.3

ph-index = 2

Forward Citations = 12(Granted Patents)


Location History:

  • Taipei, TW (2013 - 2014)
  • New Taipei, TW (2014 - 2016)

Company Filing History:

goldMedal11 out of 19 
 
Pfc Device Corporation
 patents
silverMedal2 out of 14 
 
Pfc Device Holdings Limited
 patents

Years Active: 2013-2016

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13 patents (USPTO):Explore Patents
1. 9406745 - Method of manufacturing super junction for semiconductor device (2016-08-02),
2. 9379180 - Super junction for semiconductor device and method for manufacturing the same (2016-06-28),
3. 9029235 - Trench isolation MOS P-N junction diode device and method for manufacturing the same (2015-05-12),
4. 8853748 - Rectifier with vertical MOS structure (2014-10-07),
5. 8809946 - Wide trench termination structure for semiconductor device (2014-08-19),
6. 8796808 - MOS P-N junction schottky diode device and method for manufacturing the same (2014-08-05),
7. 8753963 - Manufacturing method of multi-trench termination structure for semiconductor device (2014-06-17),
8. 8735228 - Trench isolation MOS P-N junction diode device and method for manufacturing the same (2014-05-27),
9. 8728878 - MOS P-N junction diode device and method for manufacturing the same (2014-05-20),
10. 8704298 - MOS diode with termination structure and method for manufacturing the same (2014-04-22),
11. 8680590 - Multi-trench termination structure for semiconductor device (2014-03-25),
12. 8664701 - Rectifier with vertical MOS structure (2014-03-04),
13. 8390081 - MOS P-N junction diode device and method for manufacturing the same (2013-03-05),

Title: Inventor Kuo-Liang Chao

Introduction: Kuo-Liang Chao is a renowned inventor hailing from New Taipei, Taiwan. He has made significant contributions to the field of technology through his innovative creations.

Latest Patents: Kuo-Liang Chao holds several patents in various technological domains, showcasing his continuous dedication to advancing innovation in the industry.

Career Highlights: Throughout his career, Kuo-Liang Chao has been recognized for his groundbreaking inventions that have revolutionized the way we interact with technology. His commitment to pushing the boundaries of what is possible has earned him a reputation as a visionary inventor.

Collaborations: Kuo-Liang Chao has collaborated with leading tech companies and research institutions to further develop his inventions and bring them to the market. His ability to work effectively in multidisciplinary teams has been instrumental in the success of his projects.

Conclusion: In conclusion, Kuo-Liang Chao's passion for innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of technology. His inventive spirit continues to inspire future generations of inventors to push the limits of what is achievable.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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