The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2014
Filed:
Apr. 21, 2009
Kuo-liang Chao, Taipei, TW;
Hung-hsin Kuo, Taipei, TW;
Tse-chuan Su, Taipei, TW;
PFC Device Corp., Taipei, TW;
Abstract
A MOS P-N junction Schottky diode device includes a substrate having a first conductivity type, a field oxide structure defining a trench structure, a gate structure formed in the trench structure and a doped region having a second conductivity type adjacent to the gate structure in the substrate. An ohmic contact and a Schottky contact are formed at different sides of the gate structure. The method for manufacturing such diode device includes several ion-implanting steps to form several doped sub-regions with different implantation depths to constitute the doped regions. The formed MOS P-N junction Schottky diode device has low forward voltage drop, low reverse leakage current, fast reverse recovery time and high reverse voltage tolerance.