The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2014
Filed:
Jan. 09, 2013
Applicant:
Pfc Device Corp., New Taipei, TW;
Inventors:
Assignee:
PFC Device Corp., New Taipei, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/861 (2006.01); H01L 29/78 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/0661 (2013.01); H01L 29/872 (2013.01); H01L 29/6609 (2013.01); H01L 29/407 (2013.01); H01L 29/861 (2013.01);
Abstract
A wide trench termination structure for semiconductor device includes a wide trench structure defined on a semiconductor substrate and having a width larger than that of narrow trench structures on an active region of the semiconductor device, an oxide layer arranged on an inner face of the wide trench structure, at least one trench polysilicon layer arranged on the oxide layer and on inner sidewall of the wide trench structure, a metal layer arranged on the oxide layer not covered by the trench polysilicon layer and on the trench polysilicon layer, and a field oxide layer arranged on the semiconductor substrate and outside the wide trench structure.