logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9406745 B1

PDFFull Text
Date of Patent:
Aug. 02, 2016

Filed:

Jul. 23, 2015

Method of manufacturing super junction for semiconductor device

Applicant:

Pfc Device Holdings Limited, Hong Kong, HK;

Inventors:

Paul Chung-Chen Chang, Saratoga, CA (US);

Kuo-Liang Chao, New Taipei, TW;

Mei-Ling Chen, New Taipei, TW;

Lung-Ching Kao, New Taipei, TW;

Assignee:

PFC DEVICE HOLDINGS LIMITED, Chai Wan, HK;

Attorney:

Muncy, Geissler, Olds & Lowe, P.C.

Primary Examiner:

Reema Patel

Assistant Examiner:

Syed Gheyas

Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 29/06 (2006.01); H01L 21/266 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/74 (2006.01); H01L 29/861 (2006.01); H01L 29/872 (2006.01); H01L 29/78 (2006.01); H01L 29/749 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0634 (2013.01); H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 21/324 (2013.01); H01L 29/0878 (2013.01); H01L 29/66136 (2013.01); H01L 29/66143 (2013.01); H01L 29/66333 (2013.01); H01L 29/66363 (2013.01); H01L 29/66712 (2013.01); H01L 29/7393 (2013.01); H01L 29/74 (2013.01); H01L 29/749 (2013.01); H01L 29/7802 (2013.01); H01L 29/861 (2013.01); H01L 29/872 (2013.01);
Abstract

A method of manufacturing super junction for semiconductor device is disclosed. The super junction for semiconductor device includes a silicon substrate with a first conductive type epitaxial layer, a plurality of highly-doped second conductive type columns formed in the first conductive type epitaxial layer, and a plurality of lightly-doped (first conductive type or second conductive type) side walls formed on outer surfaces of the highly-doped second conductive type. The semiconductor device is super-junction MOSFET, super junction MOSFET, super junction Schottky rectifier, super junction IGBT, thyristor or super junction diode.

Find Patent Forward Citations

Loading…