Kuang-I Liu

Title: Kuang-I Liu: Innovator in Semiconductor Technology

Introduction

Kuang-I Liu is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of magnetic tunnel junction devices. With a total of 4 patents to his name, Liu's work has had a substantial impact on the industry.

Latest Patents

One of Liu's latest patents is focused on a magnetic tunnel junction device and the method of forming the same. This semiconductor device involves a detailed process that includes forming a bottom electrode layer over a substrate, followed by the creation of magnetic tunnel junction (MTJ) layers over this bottom layer. A top electrode layer is then formed over the MTJ layers, which is subsequently patterned. After this patterning, one or more process cycles are performed on the MTJ layers and the bottom electrode layer. The resulting structures consist of a patterned top electrode layer, patterned MTJ layers, and a patterned bottom electrode layer, which together form MTJ structures. Each process cycle includes an etching process on the MTJ layers and the bottom electrode layer for a specified duration, along with a magnetic treatment on these layers for another duration.

Career Highlights

Throughout his career, Kuang-I Liu has worked with notable organizations such as Taiwan Semiconductor Manufacturing Company Limited and Tsinghua University. His experience in these prestigious institutions has allowed him to refine his expertise in semiconductor technology and contribute to groundbreaking innovations.

Collaborations

Liu has collaborated with esteemed colleagues, including Bo-Jhih Shen and Joung-Wei Liou. These partnerships have further enhanced his research and development efforts in the semiconductor field.

Conclusion

Kuang-I Liu's contributions to semiconductor technology, particularly through his innovative patents, highlight his role as a key figure in the industry. His work continues to influence advancements in this critical area of technology.