Taiwan Semiconductor Manufacturing Comp. Ltd.

Tsinghua University

Kuang-I Liu

Yi-Wei Chiu

Han-Ting Tsai

Joung-Wei Liou

Li-Te Hsu

Cheng-Yi Wu

Shih-Ho Lin

Chin-Hsing Lin

Bo-Jhih Shen

Jinn-Kwei Liang

Tsong-Pyng Perng

Chi-Chung Kei

Chien-Pao Lin

Mrinalini Mishra

Sheng-Hsin Huang

Yu-Hsuan Yu

A semiconductor device and a method of forming the same are provided. The method includes forming a bottom electrode layer over a substrate. A magnetic tunnel junction (MTJ) layers are formed over the bottom electrode layer. A top electrode layer is formed over the MTJ layers. The top electrode layer is patterned. After patterning the top electrode layer, one or more process cycles are performed on the MTJ layers and the bottom electrode layer. A patterned top electrode layer, patterned MTJ layers and a patterned bottom electrode layer form MTJ structures. Each of the one or more process cycles includes performing an etching process on the MTJ layers and the bottom electrode layer for a first duration and performing a magnetic treatment on the MTJ layers and the bottom electrode layer for a second duration.

Magnetic tunnel junction device and method of forming same

An enclosed-channel reactor system is provided, which includes: a reactor body having a plurality of enclosed channels therein; an upper cap disposed at one end of the reactor body and having an inlet port communicating with the plurality of enclosed channels; a lower cap disposed at the other end of the reactor body opposite to the upper cap and having an outlet port communicating with the plurality of enclosed channels; and at least a conduit plate disposed between the upper cap and the reactor body for guiding a precursor injected from the inlet port into the plurality of enclosed channels uniformly.

Enclosed-channel reactor system with conduit plate

Growing community of inventors

Hsinchu, Taiwan

Kuang-I Liu