The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2021
Filed:
Sep. 10, 2019
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Bo-Jhih Shen, Tainan, TW;
Kuang-I Liu, Hsinchu, TW;
Joung-Wei Liou, Zhudong Town, TW;
Jinn-Kwei Liang, Yongkang, TW;
Yi-Wei Chiu, Kaohsiung, TW;
Chin-Hsing Lin, Chiayi, TW;
Li-Te Hsu, Shanhua Township, TW;
Han-Ting Tsai, Kaoshiung, TW;
Cheng-Yi Wu, Taichung, TW;
Shih-Ho Lin, Jhubei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor device and a method of forming the same are provided. The method includes forming a bottom electrode layer over a substrate. A magnetic tunnel junction (MTJ) layers are formed over the bottom electrode layer. A top electrode layer is formed over the MTJ layers. The top electrode layer is patterned. After patterning the top electrode layer, one or more process cycles are performed on the MTJ layers and the bottom electrode layer. A patterned top electrode layer, patterned MTJ layers and a patterned bottom electrode layer form MTJ structures. Each of the one or more process cycles includes performing an etching process on the MTJ layers and the bottom electrode layer for a first duration and performing a magnetic treatment on the MTJ layers and the bottom electrode layer for a second duration.