Ku-Ning Chang

Title: Ku-Ning Chang: Innovator in Non-Volatile Memory Technology

Introduction

Ku-Ning Chang is a prominent inventor based in Taichung, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in non-volatile memory systems. With a total of 3 patents to his name, Chang continues to push the boundaries of innovation in integrated chip design.

Latest Patents

Chang's latest patents focus on advanced methods for forming integrated chips. One notable patent is for a test line letter structure designed for embedded non-volatile memory technology. This method involves creating a test line letter structure with sidewalls that extend along a defined path, forming an alpha-numeric character from a top view. The structure is developed using a first polysilicon layer and a second polysilicon layer, separated by a dielectric layer. Another patent addresses a substrate with test line letters that help identify test lines on integrated chips while preventing contamination during high-k metal gate processes. This substrate features a semiconductor base with trenches that create openings shaped like alpha-numeric characters.

Career Highlights

Ku-Ning Chang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work has been instrumental in advancing memory technology, making him a key figure in his field.

Collaborations

Chang has collaborated with notable colleagues, including Wei Cheng Wu and Jui-Tsung Lien, contributing to various projects that enhance semiconductor technology.

Conclusion

Ku-Ning Chang's innovative work in non-volatile memory technology exemplifies his commitment to advancing semiconductor design. His patents reflect a deep understanding of integrated chip technology and its applications.