Company Filing History:

9 out of 1,075

Spansion LLC.

Years Active: 2005-2014

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11 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8698280 - Capacitive element using MOS transistors (2014-04-15),

2. 8642422 - Method of manufacturing a semiconductor device (2014-02-04),

3. 8076753 - Semiconductor device and method of manufacturing the same (2011-12-13),

4. 7961519 - Memory employing independent dynamic reference areas (2011-06-14),

5. 7940570 - Memory employing separate dynamic reference areas (2011-05-10),

6. 7605616 - Voltage detector circuit (2009-10-20),

7. 7321515 - Memory device and control method therefor (2008-01-22),

8. 7239576 - Memory device and method of controlling the same (2007-07-03),

9. 7190630 - Semiconductor storage device and method of selecting bit line of the semiconductor storage device (2007-03-13),

10. 6965530 - Semiconductor memory device and semiconductor memory device control method (2005-11-15),

11. 6917541 - Nonvolatile semiconductor memory device (2005-07-12),

Title: Koji Shimbayashi: Innovator in Semiconductor Technology

Introduction

Koji Shimbayashi is a prominent inventor based in Kasugai, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 11 patents. His work focuses on the development of advanced semiconductor devices, particularly those utilizing MOS transistors.

Latest Patents

Shimbayashi's latest patents include a capacitive element using MOS transistors. This invention describes a semiconductor device composed of a MOS transistor on which impurities are added from the surface of a P-type substrate. The region immediately below a gate layer is the P-type substrate on which the impurities are not added. First and second MOS devices, having an N-type diffusion layer, are provided on the surface region of the P-type substrate circumscribing the gate layer. The gate layer of the first MOS device and the N-type diffusion layer of the second MOS device are connected, as well as the N-type diffusion layer of the first MOS device and the gate layer of the second MOS device, thereby composing a first capacitive element. Another notable patent is a method of manufacturing a semiconductor device, which shares similar foundational concepts with the capacitive element patent.

Career Highlights

Throughout his career, Koji Shimbayashi has worked with notable companies in the semiconductor industry, including Spansion LLC and Fujitsu Corporation. His experience in these organizations has allowed him to refine his expertise and contribute to groundbreaking innovations in semiconductor technology.

Collaborations

Shimbayashi has collaborated with talented individuals in the field, including Takaaki Furuyama and Kenta Kato. These collaborations have further enriched his work and led to advancements in semiconductor device design.

Conclusion

Koji Shimbayashi is a distinguished inventor whose contributions to semiconductor technology have had a lasting impact. His innovative patents and collaborations reflect his commitment to advancing the field.

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