Koji Amazutsumi

Title: Koji Amazutsumi: Innovator in Semiconductor Technology

Introduction

Koji Amazutsumi is a prominent inventor based in Kyoto, Japan, known for his significant contributions to semiconductor technology. With a total of four patents to his name, Amazutsumi has made strides in developing devices that enhance the performance and efficiency of power devices.

Latest Patents

Amazutsumi's latest patents include a semiconductor device designed to reduce leakage current, which is particularly beneficial for power devices. This innovative device features an n+-type semiconductor layer containing a crystalline oxide semiconductor as a major component, along with an n−-type semiconductor layer placed atop it. The design incorporates a high-resistance layer embedded within the n−-type layer, ensuring optimal performance. Another notable patent involves a semiconductor device that includes one or more p-type semiconductors positioned between an n-type semiconductor layer and an electrode, enhancing the overall semiconductor characteristics.

Career Highlights

Koji Amazutsumi is currently employed at Flosfia Inc., where he continues to push the boundaries of semiconductor technology. His work focuses on creating devices that not only improve efficiency but also address critical issues such as leakage current in power devices.

Collaborations

Amazutsumi collaborates with esteemed colleagues, including Mitsuru Okigawa and Fujio Okui, who contribute to his innovative projects and research endeavors.

Conclusion

Koji Amazutsumi stands out as a key figure in the field of semiconductor technology, with his patents reflecting a commitment to innovation and excellence. His contributions are paving the way for advancements in power devices, showcasing the importance of research and development in this critical area.