The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2024
Filed:
Jul. 10, 2019
Applicant:
Flosfia Inc., Kyoto, JP;
Inventors:
Masahiro Sugimoto, Kyoto, JP;
Isao Takahashi, Kyoto, JP;
Takashi Shinohe, Kyoto, JP;
Koji Amazutsumi, Kyoto, JP;
Assignee:
FLOSFIA INC., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/24 (2006.01); H01L 29/417 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 29/417 (2013.01); H01L 29/24 (2013.01); H01L 29/872 (2013.01);
Abstract
A semiconductor device with enhanced semiconductor characteristics that is useful for power devices. A semiconductor device, including: an n-type semiconductor layer; one or more p-type semiconductors; an electrode, the one or more p-type semiconductors that are provided between the n-type semiconductor layer and the electrode, and at least a part of the one or more p-type semiconductors is protruded in the electrode.