The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2022
Filed:
Jul. 10, 2019
Applicant:
Flosfia Inc., Kyoto, JP;
Inventors:
Masahiro Sugimoto, Kyoto, JP;
Isao Takahashi, Kyoto, JP;
Takashi Shinohe, Kyoto, JP;
Koji Amazutsumi, Kyoto, JP;
Assignee:
FLOSFIA INC., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/24 (2006.01); H01L 29/872 (2006.01); C23C 16/40 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H02M 3/335 (2006.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); C23C 16/406 (2013.01); H01L 21/0262 (2013.01); H01L 21/02565 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H02M 3/33569 (2013.01);
Abstract
A semiconductor device with enhanced semiconductor characteristics that is useful for power devices. A semiconductor device, including: an n-type semiconductor layer; an electrode; two or more p-type semiconductors provided between the n-type semiconductor layer and the electrode, the n-type semiconductor layer containing a corundum-structured crystallin oxide semiconductor as a major component, a number of the two or more p-type semiconductor that is equal to or more than three, and the two or more p-type semiconductors that are embedded in the n-type semiconductor layer.